Resin encapsulated electrode structure of a semiconductor device, mounted semiconductor devices, and semiconductor wafer including multiple electrode structures

ABSTRACT

A semiconductor integrated circuit package having plastic sealed an IC chip is produced by the following steps; producing external leading out electrodes on a wafer including an IC chip employing photolithography in a wafer process for producing an IC chip, plating resin on the wafer in the wafer state and hardening the wafer, polishing the surface of the wafer thereby to clean the external leading out electrodes, and performing dicing/slicing/cutting to the wafer and expanding the wafer. Thus, the semiconductor integrated circuit package includes packaging resin and a polished electrode on the wafer is obtained. Therefore, the problem in the conventional process that to control the applied pressure in the ILB process is difficult is avoided. Further, it is avoided that the electrical characteristics of the IC chip is deteriorated caused by the inductance at the lead part of the external leading out electrode by that the inner leads and the outer leads are omitted due to that the forming process of the outer lead is omitted included in the bump production process, whereby the IC chip characteristics are effectively brought out.

FIELD OF THE INVENTION

[0001] The present invention relates to a structure of a semiconductor integrated circuit package, a production method therefor, a method for testing the same, and a mounting method thereof.

BACKGROUND OF THE INVENTION

[0002]FIG. 7 is a diagram illustrating a flowchart for manufacturing a flip-chip IC as a semiconductor integrated circuit package according to the prior art tape automated bonding (hereinafter referred to as TAB) technique. The technique illustrated in FIG. 7 includes techniques of inner lead bonding (hereinafter referred to as ILB) and outer lead bonding (hereinafter referred to as OLB). FIG. 8 is a diagram illustrating a flowchart of the ILB and the OLB in the manufacturing flow of FIG. 7.

[0003] In the figures, reference numeral 1 designates an IC chip. Bumps 2 are disposed on the IC chip 1 and these bumps 2 are terminals for performing ILB. A polyimide film carrier 4 for bonding the IC chip 1 thereon has inner leads 3 at its inner ends. Resin 5 is plated on the rear surface of the IC chip 1 including the bonded portions between the bumps 2 and the inner leads 3. A printed circuit board 6 is provided for fixing the IC chip 1 via the lead frame 3′. Wiring electrodes 7 are produced on the printed circuit board 6. The lead frame 3′ constituting the outer lead portion are fixed onto the wiring electrode 7 formed on the printed circuit board 6 via the solder 8.

[0004] Next, a manufacturing method of a flip-chip IC package according to the TAB technique will be described below.

[0005] After semiconductor device layers are produced by a wafer process at the step S71, electrodes are formed at the step S72. Thereafter, a test is carried out in the wafer state at the step S73 (wafer test), and a dicing/slicing/cutting is carried out at the step S74 and an expanding is carried out at the step S75. Thereafter, the Au bumps 2 produced on the electrodes of the IC chip 1 and the inner lead 3 of the polyimide film carrier 4 are thermally adhered with pressure to each other, thereby completing a flip-chip ILB at the step S76.

[0006] Next, plastic-molding is carried out at the step S77, hardening is carried out at the step S78, and the outer leads (lead frames) 31 are cut with punching and formed into a predetermined size at the step S79, and thereafter a burn-in test is carried out at the step S80, and the outer lead 3′ is bonded onto the wiring substrate 6 via the solder 8, thereby completing the substrate mounting OLB at the step S81.

[0007] Heretofore, it is required to apply a process for producing solder onto the wiring substrate electrode 7. As means for bonding and heating then, there are a pulse tool heating, a constant tool heating, a light beam heating, and a laser heating. After the substrate mounting OLB is carried out, a test of the device is carried out at the step S82.

[0008] Since the flip-chip type package according to the prior art TAB technique has the above-described structure, in bonding the Au bump to the Ni—Au gilded inner lead 3 in the ILB process, a high temperature and a high pressure are required and the control of the applied pressure was difficult. When a abrupt pressure application is carried out, the silicon dioxide film below the aluminum electrode of the IC chip 1 is damaged.

[0009] In addition, the inductance at the lead part 3′ for the OLB causes deteriorating the IC chip characteristic and the lead is required to be designed and produced as short as possible. This causes especially a problem in a high frequency circuit and a high speed switching circuit.

[0010] In addition, when employed as a countermeasure in a case where a larger current flows in an IC chip to cause heat generation, it was difficult to increase the heat conductivity between radiative fins and the IC chip.

SUMMARY OF THE INVENTION

[0011] It is an object of the present invention to provide a semiconductor integrated circuit chip that solves the above-described problems in the ILB process.

[0012] It is another object of the present invention to provide a method that is suitable for producing the above-described semiconductor integrated circuit.

[0013] It is a still another object of the present invention to provide a semiconductor integrated circuit package and a production method therefor that solves the deterioration of the electrical characteristics due to the inductance at the lead part and effectively brings out the IC chip characteristics.

[0014] It is a yet another object of the present invention to provide a method for mounting the above-described package that has a high heat radiation efficiency.

[0015] It is a still another object of the present invention to provide a method for testing the above-described package that solves the problem in the conventional semiconductor package, i.e., that curvature of an IC lead is likely to arise at inserting an IC chip to the IC socket with pressure, which IC socket is fixed on the burn-in substrate at the burn-in test.

[0016] Other objects and advantages of the present invention will become apparent from the detailed description given hereinafter; it should be understood, however, that the detailed description and specific embodiment are given by way of illustration only, since various changes and modifications within the scope of the invention will become apparent to those skilled in the art from this detailed description.

[0017] According to a first aspect of the present invention, in a semiconductor integrated circuit package and a production method thereof, an IC packaging process is carried out in a wafer state including external leading out electrodes, plating resin on the wafer in the wafer state and hardening the resin is performed in the wafer state to form junction parts between glass coating and resin for producing a barrier part for protecting the IC from the surrounding environment; and then dicing/slicing/cutting are carried out, and thereafter expanding is carried out to obtain a flip-chip type package. Because the ILB process in the conventional TAB technique is omitted included in the bump forming process, the problem in the conventional method that to control the applied pressure in the ILB process is difficult, is solved. Further, the other problem in the conventinal method that the electrical characteristic deteriorates caused by an inductance at the lead part is also solved by that an inner lead and an outer lead are omitted due to that the outer lead forming process included in the bump production process, thereby effectively bringing out the IC chip characteristics. In addition, because cleaning of the external taking out electrodes is achieved and also the wafer surface is flattened, and then the IC chip is mounted onto a substrate, production and incorporation of an IC chip into a package are performed easily and stably with high precision.

[0018] According to a second embodiment of the present invention, a flip-chip type package produced after expanding is provisionally mounted onto a burn-in board by soldering and then a burn-in test is carried out, it is heated to melt the soldered part, and the package is taken out from the burn-in board, and it is mounted onto a printed circuit board with the external taking out electrodes directed bonded on the wiring patterns on the board, thereby completing incorporation of the elements onto the printed circuit board. Therefore, a problem in the conventional method that an IC lead is likely to be curved at inserting the IC chip to an IC socket with pressure in the conventional burn-in test, is solved, resulting in a highly reliable device.

[0019] According to a third embodiment of the present invention, a production method of a semiconductor integrated circuit package includes packaging plural kinds of ICs into respective flip-chip type packages, mounting those on a printed circuit board by soldering, heating those to perform the surface tension correction, and repeating multi-chip system tests with replacing faulty chips, thereby constructing multi-chip modules. Thereby, highly reliable multi-chip modules are obtained.

[0020] According to a fourth aspect of the present invention, a mounting method of a semiconductor integrated circuit package includes plating solder onto a printed circuit board, and adhering radiative fins by heat conductive grease to a surface opposite to a front surface of the above-described protective package which front surface has electrodes thereon. Therefore, heat generated in the IC chip is directly radiated through the radiative fins, resulting in a high heat radiation efficiency.

BRIEF DESCRIPTION OF THE DRAWINGS

[0021]FIG. 1 is a diagram illustrating a production flow for producing a flip-chip type package of a semiconductor integrated circuit device package according to a first embodiment of the present invention;

[0022]FIG. 2 is a diagram illustrating a flow for burn-in process of a flip-chip type package according to a second embodiment of the present invention;

[0023]FIG. 3 is a diagram illustrating a soldering flow comprising mounting a flip-chip type package onto a burn-in test substrate and taking out the same from the burn-in test substrate according to a third embodiment of the present invention;

[0024]FIG. 4 is a diagram illustrating an example of a flow for constructing a multi-chip module of a flip-chip type package according to a fourth embodiment of the present invention;

[0025]FIG. 5 is a diagram illustrating a flow for soldering in the flow for constructing a multi-chip module of a flip-chip type package according to the fourth embodiment of the present invention;

[0026]FIG. 6 is a diagram illustrating a structure in which radiative fins are fixed to the IC chip for radiating heat generated inside the IC of a flip-chip type package according to a fifth embodiment of the present invention;

[0027]FIG. 7 is a diagram illustrating a production flow of a flip-chip IC as a semiconductor integrated circuit package according to the prior art TAB technique; and

[0028]FIG. 8 is a diagram illustrating the processes of ILB and OLB in the production flow of a flip-chip IC as a semiconductor integrated circuit package according to the prior art TAB technique.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

[0029] Embodiment 1.

[0030]FIG. 1 is a diagram illustrating a production flow for producing a flip-chip type package of a semiconductor integrated circuit package according to a first embodiment of the present invention.

[0031] In FIG. 1, the electrode part 14 comprising aluminum wiring is exposed on the wafer just before completing the wafer process of a semiconductor integrated circuit and the other parts are coated with glass coating 13, thereby protecting electronic circuits on the wafer surface, as is illustrated at the top of FIG. 1(b).

[0032] In FIG. 1, reference numeral 11 designates a substrate including epitaxially grown layers and diffused layers produced thereon. A silicon dioxide film 12 is formed on the substrate 11. A glass coating film 13 is provided as a surface protecting film. An electrode 14 of an electronic circuit is formed comprising aluminum. Reference numeral 15 designates photoresist. Metal 16 comprising Cr/Cu/Au is deposited over the photoresist 15 to form an electrode underlayer forming part 16 a on the electrode 14. Reference numeral 17 designates photoresist. Metal 18 comprising Au is deposited over the photoresist 17 to form an external electrode forming part 18 a. Reference numeral 19 designates photoresist. Reference numeral 20 designates resin formed on the glass coating film 13.

[0033] A production process for producing the flip-chip type package will be described below.

[0034] A wafer process is carried out at the step S1, whereby a wafer having an aluminum electrode 14 and a surface protecting film 13 on the substrate 11 via the oxide film 12 is produced as shown at the top of FIG. 1(b). In order to produce an external electrode for the electrode 14, a photolithography technique is employed to form the photoresist 15 at the step S2 and sputtering of Cr/Cu/Au 16 is carried out to produce an underlayer electrode 16 a on the electrode 14 at the step S3.

[0035] Further, a photolithography technique is employed to form the photoresist 17 at the step S4 and electroplating of Au 18 is carried out to produce the external electrode 18 a on the electrode underlayer forming part 16 a at the step S5. The external electrode 18 a functions as an outer lead.

[0036] In addition, a photolithography technique is employed to form the photoresist 19 at the step S6, the resin 20 is applied at the step S7, and it is hardened to produce a barrier part between the resin 20 and the glass coating film 13 at the step S8.

[0037] By producing this barrier part, i.e., contact part between resin and glass coating, it is possible to prevent intrusion of water or sodium ions into the inside of the IC chip, thereby improving the reliability of the device. The production of the barrier part is quite important in the packaging process.

[0038] Next, in order to flatten the wafer surface and clean the external electrodes, the surface polishing is carried out at the step S9. This surface polishing is quite important in the present invention.

[0039] In the above-described process, photoresist for photolithography are employed twice, i.e., in the electrode underlayer forming process at the steps S2 and S3 and the external electrode forming process at the steps S4 and S5. However, the employment of this photolithography technique may be only once by the electrode underlayer forming and the external electrode forming being carried out successively on the entire surface of the wafer surface and then those electrodes are etched together at the same time.

[0040] Also in this case, the formation of the barrier part, i.e., the contact part between the resin and the glass coating, is important and further the flatness of the wafer surface and the cleanness of the external electrode, which are obtained by the surface polishing of the wafer surface, are important.

[0041] While Cr/Cu/Au and Au are employed in forming electrodes in the above described, other metals, for example, Mo, W, Ti, In, or Ni may be employed. Further, an insulating film is not restricted to a silicon dioxide film and other kinds of films, for example, a silicon nitride film may be employed.

[0042] In the flip-chip type package of this first embodiment as described above, an IC packaging process is carried out in a wafer state, thereby enabling a batch processing, leading to an improved production efficiency and a low cost and high precise package.

[0043] In addition, because the ILB in the prior art packaging process is included in the bump formation in the external electrode forming process and further the outer lead formation is included in the bump formation, a batch processing in the wafer state can be carried out, leading to a low cost and high preciseness package.

[0044] In addition, because the inner lead and the outer lead are included in the external leading out electrodes, the lead part can be made extremely short and the deterioration of the electrical characteristics due to the inductance at the lead part is avoided, effectively bringing out the IC chip characteristics. This can reduce the load in the input/output interface circuit of the IC chip, enabling setting the current driving ability at a small value in the IC circuit design, whereby current consumption is reduced.

[0045] In addition, the circuit size can be minimized and the IC chip area can be reduced due to that the current driving ability can be set to a small value, and the heat generation from the IC chip can be also reduced. Accordingly, the present invention influences favorably not only on the electrical characteristics but also on the peripheral circuits and its mounting manner, thereby further realizing a low cost and high precision package.

[0046] Embodiment 2.

[0047]FIG. 2 is a diagram illustrating a production flow a semiconductor integrated circuit package according to a second embodiment of the present invention, and explaining the burn-in process of a flip-chip type package, as easily compared with the prior art TAB package.

[0048] In FIG. 2, after performing the wafer process at the step S21, an electrode forming process which corresponds to the prior art ILB, is carried out in the wafer state at the step S22. After the photolithography process is carried out at the step S23, a barrier part, i.e., a contact part between the resin and the glass coating, for protecting the electronic circuits at the surface of the IC chip is produced at the step S24. Then, a test of electrical characteristics is carried out by fitting a probe to the wafer at the step S25. After the wafer test is carried out, dicing/slicing/cutting are carried out at the step S26, expanding is carried out at the step S27, and provisional mounting of an IC chip onto the board is carried out at the step S28, corresponding to the prior art OLB.

[0049] Up to this process, the step S22 of FIG. 2 corresponds to the steps S2 to S5 of FIG. 1, the step S23 of FIG. 2 corresponds to the step S6 of FIG. 1, the step S24 of FIG. 2 corresponds to the steps S7 to S10 of FIG. 1, the step S25 of FIG. 2 corresponds to the step S11 of FIG. 1, the step S26 of FIG. 2 corresponds to the step of S12 of FIG. 1, and the step S27 of FIG. 2 corresponds to the step S13 of FIG. 1.

[0050] The substrate provisional mounting at the step S28 aims at the following two points.

[0051] One of them resides in carrying out the burn-in test at the step S29 and the other of them resides in solder gilding the external electrode. When the solder gilding of the external electrode is carried out and the IC is left in the air, it is possible to prevent the deterioration of the solder wetness of the external electrode part.

[0052] In the burn-in test at the step S29, by carrying out a board provisional mounting of an IC chip onto the burn-in board, it is possible to assure a secured contact of the electrode and even when the same burn-in board is repeatedly used, secured contacts of the electrode are enabled and it is possible to increase the number of times of usage of the burn-in board in an economic view as well as possible to save the cost for the burn-in test.

[0053] In a case of an IC for which a burn-in test is not required, the provisional mounting of an IC chip onto the board is not necessarily required. Even in this case, however, in order to prevent the deterioration of the solder wetness, solder gilding is preferable to be carried out. When there is no problem in the solder wetness, solder gilding is not required.

[0054] After the burn-in test at the step S29 is completed, the IC is taken out from the burn-in board at the step S31, and the IC is contained in a chip tray to be kept therein.

[0055] Thereafter, the IC is mounted onto a printed circuit board with the other ICs, and an OLB is carried out at the step S32. Then, the incorporation of the IC chip onto the printed circuit board is completed and an operation test of the printed circuit board, i.e., the board test is carried out at the step S33, whereby the process of assembling IC onto a printed circuit board is completed.

[0056] In this second embodiment described above, in a case where the burn-in test is required to be carried out, the electrical contact is realized not by inserting the IC chip into the IC socket with pressure in fixing the IC chip onto the burn-in board, but it is realized by melting the solder, thereby resulting no faulty in electrical contacts. In addition, the deterioration in the electrical characteristics due to the inductance at the lead part of such as a socket is avoided and the burn-in test of the IC chip can be performed in a state closer to the actual use state even for high frequency circuits or high speed switching circuits, thereby enabling the burn-in test with high precision.

[0057] Embodiment 3.

[0058]FIG. 3 is a diagram illustrating soldering flow process, i.e., mounting of an IC chip onto a burn-in test board and taking out of the IC chip from the burn-in test board, for producing a flip-chip type package according to a third embodiment of the present invention. In FIG. 3, reference numeral 21 designates a burn-in test board. Printed wirings 22 are formed on the burn-in test board 21. Solder paste 23 is plated on the printed wirings 22 on the burn-in test board 21 by printing technique. Reference numeral 24 designates a flip-chip type package IC of this third embodiment of the present invention.

[0059] A production flow of this third embodiment will be described below.

[0060] Solder printing is carried out onto the burn-in test board 21 at the step S41, and then a flip-chip type package 24 is picked up by absorbing the same with a vacuum collet at the step S42, and it is mounted on the burn-in test board 21 with positioning on the solder 23 at the step S44.

[0061] Next, heating is carried out at the step S45 to melt the solder paste 23, thereby bonding the external electrodes of this IC with the printed wiring 22. Meanwhile, in the state where the solder paste 23 is melted, the balancing of the IC well works by the surface tension of the solder, and position correction is performed due to the surface tension along the pattern of the printed wiring 22 on the substrate 21 at the step S46. In more detail, the surface tension correction at this step S46 is performed in such a manner that the position of the IC chip, particularly the positions of the electrodes is corrected including its orientation by the surface tension of the melted solder so as to coincide with the wiring patterns of the printed circuit board. After this surface tension correction being performed, the temperature is fallen down by radiating heat at the step S47, and the solder 23 is solidified, thereby completing the mounting of the IC onto the substrate.

[0062] Thereafter, the burn-in test is carried out at the step S48. After the burn-in test is completed, quality assurance inspection or the like of the IC chip is carried out and the test of the electrical characteristics is completed. Here, not only the burn-in test but also the ordinary test at room temperature may be carried out with soldering the IC to the substrate 21 in this manner. Thus, the mounting that is conventionally carried out by employing the IC socket, is carried out by soldering.

[0063] After completing these tests, heating is again carried out to melt the solder solidified-part at the step S49, and it is picked up by a vacuum collet at the step S50. Then, the IC is taken out from the substrate 21 and heat radiation is performed at the step S51, and thereafter, it is contained in a tray at the step S52 to be kept therein. Here, solder gilding of the solder 23′ is carried out to the external electrode part of the IC 24, and the solder wetness at the next soldering process is improved.

[0064] In this third embodiment described above, similarly to the second embodiment, the mounting of an IC chip onto the burn-in board is carried out not by inserting the IC chip to the IC socket or the like with pressure, but by connecting electrodes with melting the solder. Therefore, there arises no contact faulty and no deterioration in the electrical characteristics due to the inductance at the lead part of the socket or the like. This results in that the burn-in test can be carried out in a state closer to the actual use state even for a high frequency circuit or a high speed switching circuit, thereby improving the precision of the burn-in test.

[0065] Embodiment 4.

[0066]FIG. 4 is a diagram illustrating a flow for incorporating a flip-chip type package onto a multi-chip module (hereinafter referred to as “MCM”) according to a fourth embodiment of the present invention.

[0067] The production flow will be described.

[0068] Solder paste is printed on a printed circuit board at the step S61, and the flip-chip type package of the present invention is picked up by the vacuum collet at the step S62, and the positional alignment is carried out (the step S63) to perform mounting at the step S64. By repeating this operation, a plurality of different kinds of ICs are mounted. After completing the mounting, heating is carried out at the step S65, and the solder paste on the printed circuit board is melted to perform the surface tension correction at the step S66 similarly to that performed at the step S46 in the third embodiment. Thereafter, radiating heat is carried out at the step S67, thereby completing the soldering and mounting of a plurality of different kinds of ICs.

[0069] Next, a tester is connected by applying a probe or the like to the test terminals of the board onto which the mounting of the IC is carried out, thereby carrying out a multi-chip system test at the step S68. At this time, if a faulty IC is discovered, heating is again carried out and faulty ICs are removed, and non-faulty ICs which are separately prepared are mounted at the step S69 to then perform surface tension correction, and thereafter, radiating heat is carried out to complete mounting a plurality of different kinds of ICs by soldering. Again the multi-chip system test at the step S68 is carried out to complete the multi-chip IC(MCM) at the step S70.

[0070]FIG. 5 is a diagram illustrating a process of soldering the above-described flip-chip type package onto a multi-chip module. In FIG. 5, reference numeral 31 designates an MCM wiring substrate. A printed wiring 32 is formed on the MCM printed circuit board 31. Solder paste 33 is printed on the printed circuit board 31 by printing technique. Reference numeral 24 designates a flip-chip type package IC of this fourth embodiment of the present invention.

[0071] In this soldering process, the IC chip 24 is picked up by absorbing the same with a vacuum collet 35, and it is mounted with positioned on the printed circuit board 31 as in the mounting step S64 of FIG. 4. In the figure, reference numeral 23′ designates solder gilding part of the solidified and fixed external electrode and reference numeral 33′ designates solder which is solidified by radiating heat after the solder paste 33 and the solidified solder 23′ of the solder gilding part are melted.

[0072] In this fourth embodiment, similarly as in the above-described second and third embodiments, the mounting of an IC chip onto the multi-chip module of the flip-chip type package can be accomplished by carrying out the multi-chip-system test not by inserting the chip into the IC socket or the like with pressure but by performing electrode connection by melting the solder without arising any faulty contact or any deterioration of electrical characteristics due to the inductances at the lead part of the socket or the like, and with high precision in a state closer to the actual use state even for high frequency circuits and high speed switching circuits, whereby a system including a high reliability multi-chip module is realized.

[0073] Embodiment 5.

[0074]FIG. 6 is a diagram illustrating a method for attaching radiative fins for radiating heat generated inside the IC chip, according to a fifth embodiment of the present invention.

[0075] In FIG. 6, reference numeral 31 designates a printed circuit board and a printed wiring 32 is formed on the printed circuit board 31. A flip-chip type package IC 24 according to this fifth embodiment of the present invention is provided on the printed circuit board 31 with adhered onto the printed wiring 32 via the solidified solder paste 33′. Silicone grease 36 is provided to fix radiative fins 37 to the rear surface of the flip-chip type package IC 24.

[0076] In the attaching method of radiative fins according to this fifth embodiment, the radiative fins 37 are fixed employing the silicone grease 36 onto the rear surface of the flip-chip type package IC 24 which package IC is soldered onto the printed wiring 32 formed on the printed circuit board 31. As the grease 36 employed here, it is not restricted to silicone grease, but other grease which is heat conductive grease can be employed.

[0077] As illustrated in FIG. 6, in the flip-chip type package of this fifth embodiment, as a measure for radiating heat when a lot of current flow through an IC chip, radiative fins are directly made in contact with the exposed rear surface of the IC chip, utilizing the rear surface which is opposite to the front surface having electrodes, of the IC chip exposed in the mounting state, whereby a mounting manner having a high heat radiation efficiency is realized. Thereby, a larger current can flow through the IC chip, whereby higher frequency circuits and higher speed witching circuits are realized.

[0078] As is evident from the foregoing description, according to a first embodiment of the present invention, an IC packaging process is carried out in a wafer state including external leading out electrodes, plating resin on the wafer in the wafer state and hardening the resin is performed in the wafer state to form junction parts between glass coating and resin for producing a barrier part for protecting the IC from the surrounding environment, and then dicing/slicing/cutting are carried out, and thereafter expanding is carried out to obtain a flip-chip type package. Because the ILB process in the conventional TAB technique is omitted included in the bump forming process, the problem in the conventional method that to control the applied pressure in the ILB process is difficult is solved. Further, the other problem in the conventional method that the electrical characteristic deteriorates caused by an inductance at the lead part is also solved by that an inner lead and an outer lead are omitted due to that the outer lead forming process is also omitted in the present invention being included in the bump production process, thereby effectively bringing out the IC chip characteristics. In addition, because cleaning of the external taking out electrodes is achieved and also the wafer surface is flattened, and then the IC chip is mounted onto a substrate, production and incorporation of an IC chip into a package are performed easily and stably with high precision.

[0079] According to a second embodiment of the present invention, a flip-chip type package produced after expanding is provisionally mounted onto a burn-in board by soldering and then a burn-in test is carried out, it is heated to melt the soldered part, and the package is taken out from the burn-in board, and it is mounted onto a printed circuit board with the external taking out electrodes directed bonded on the wiring patterns on the board, thereby completing incorporation of the elements onto the printed circuit board. Therefore, a problem in the conventional method that an IC lead is likely to be curved at inserting the IC chip to an IC socket with pressure in the conventional burn-in test is solved, resulting in a highly reliable device.

[0080] According to a third embodiment of the present invention, a production method of a semiconductor integrated circuit package includes packaging plural kinds of ICs into respective flip-chip type packages, mounting those on a printed circuit board by soldering, heating those to perform the surface tension correction, and repeating multi-chip system tests with replacing faulty chips, thereby constructing multi-chip modules. Therefore, highly reliable multi-chip modules are obtained.

[0081] According to a fourth embodiment of the present invention, a mounting method of a semiconductor integrated circuit package includes plating solder onto a printed circuit board, and adhering radiative fins by heat conductive grease to a rear surface opposite to a front surface of an IC chip the above-described protective package, which front surface has electrodes thereon. Therefore, the heat generated in the IC chip is directly radiated through the radiative fins, resulting in a high heat radiation efficiency. 

What is claimed is:
 1. A semiconductor integrated circuit package having plastic sealed an IC chip, produced by the steps of: producing external leading out electrodes on a wafer including an IC chip employing photolithography in a wafer process for producing an IC chip; plating resin on the wafer in the wafer state and hardening said resin; polishing the surface of said wafer thereby to clean said external leading out electrodes; and performing dicing/slicing/cutting to said wafer and expanding said wafer; said package being a flip-chip type package including hardened packaging resin and a polished electrode on said wafer.
 2. A method of producing a semiconductor integrated circuit package including hardened packaging resin and a polished electrode on said wafer, comprising: producing external leading out electrodes on a wafer including an IC chip employing photolithography in a wafer process for producing an IC chip; plating resin on the wafer in the wafer state and hardening said resin; polishing the surface of said the wafer thereby to clean said external leading out electrodes; and performing dicing/slicing/cutting to said wafer and expanding said wafer, thereby producing a flip-chip type package.
 3. A method of producing a semiconductor integrated circuit package including hardened packaging resin and a polished electrode on said wafer, comprising: producing external leading out electrodes employing photolithography in a wafer process for producing an IC chip on a wafer including an IC chip; plating resin on the wafer in the wafer state and hardening said resin; polishing the surface of said wafer thereby to clean said external leading out electrodes; performing dicing/slicing/cutting to said wafer and expanding said wafer; after the expanding, provisionally mounting said flip-chip type package onto a burn-in substrate by performing soldering; performing a burn-in test to said flip-chip type package in said provisionally mounted state; heating and melting said soldered portion and taking out said flip-chip type package from said burn-in substrate; and mounting said flip-chip type package onto a printed circuit board utilizing said external leading out electrode.
 4. The production method of a semiconductor integrated circuit package of claim 3 , further comprising, after said process of provisional mounting and before said process of performing said burn-in test, a process of heating said package to melt said solder thereby to perform the surface tension correction and again heating said package.
 5. A method for producing a multi-chip module including a plurality of semiconductor integrated circuit packages which are produced by the steps of producing external leading out electrodes on a wafer including an IC chip employing photolithography in a wafer process for producing an IC chip; plating resin on the wafer in the wafer state and hardening said resin; polishing the surface of said wafer thereby to clean said external leading out electrodes; and performing dicing/slicing/cutting to said wafer and expanding said wafer, which comprises: obtaining-plural kinds of flip-chip type IC packages which are produced by the steps of producing external leading out electrodes on a wafer including an IC chip employing photolithography in a wafer process for producing an IC chip; plating resin on the wafer in the wafer state and hardening said resin; polishing the surface of said wafer thereby to clean said external leading out electrodes; and performing dicing/slicing/cutting to said wafer and expanding said wafer; mounting plural kinds of flip-chip type IC packages on a printed circuit board by soldering; and performing a multi-chip system test with repeating replacement of faulty chips.
 6. The production method of claim 5 , further comprising, after said process of provisional mounting and before said process of performing said burn-in test, a process of heating said package to melt said solder thereby to perform the surface tension correction and again heating said package.
 7. A method for mounting a semiconductor integrated circuit having a protective package produced by the steps of producing external leading out electrodes on a wafer including an IC chip employing photolithography in a wafer process for producing an IC chip; plating resin on the wafer in the wafer state and hardening said resin; polishing the surface of said wafer thereby to clean said external leading out electrodes; and performing dicing/slicing/cutting to said wafer and expanding said wafer, comprising: soldering said semiconductor integrated circuit package on a printed circuit board; and fixing radiative fins by heat conductive grease onto a rear surface opposite to a front surface of said semiconductor integrated circuit having said protective package, which front surface has electrodes. 